| PART |
Description |
Maker |
| CM200TU-12F |
240 x 128 pixel format, CFL Backlight with power harness
Trench Gate Design Six IGBTMOD⑩ 200 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts
Trench Gate Design Six IGBTMOD?/a> 200 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM100TU-12F |
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 100 Amperes/600 Volts
240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
| CM50TJ-24F |
128 x 64 pixel format, LED or EL Backlight available
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| ISL9N308AP3 ISL9N308AS3ST |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mOhm
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8m ?
N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 8M з
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8m з 75 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
| BSS138PW |
60 V, 320 mA N-channel Trench MOSFET
60 V, 360 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
| FGH40T65UPD |
650V, 40A, Field Stop Trench IGBT
650 V, 40 A Field Stop Trench IGBT
|
Fairchild Semiconductor
|
| FGH15T120SMD |
1200V, 15A, Field Stop Trench IGBT
1200 V, 15 A Field Stop Trench IGBT
|
Fairchild Semiconductor
|
| FDB3682_FDP3682 FDB3682 FDP3682 |
N-Channel UltraFET Trench MOSFET 100V, 32A, 36mOhm
N-Channel UltraFET Trench MOSFET 100V, 32A, 36m Ohm
From old datasheet system
|
Fairchild Semiconductor
|
| SBL20U80F-15 |
Low VF Trench Barrier Schottky Rectifier
Voltage 80V 20.0 Amp Low VF Trench Barrier Schottky Rectifier
|
SeCoS Halbleitertechnol...
|
| SBL10U100D1 SBL10U100D1-15 |
Low VF Trench Barrier Schottky Rectifier
Voltage 100V 10.0 Amp Low VF Trench Barrier Schottky Rectifier
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| CM75TU-24F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD75 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM350DU-5F |
Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD350 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
